• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The present invention relates to an epoxy resin composition for encapsulating a semiconductor device, comprising a composition containing epoxy resin, a curing agent, a curing accelerator, an inorganic filler, and carbon black, in which 0.02 to 10 parts by weight of a phosphor is used, and thus Nd: YAG laser marking property. An improved epoxy resin composition for sealing an semiconductor device and a method of manufacturing the same are provided.
    公开号:KR19990043601A
    申请号:KR1019970064624
    申请日:1997-11-29
    公开日:1999-06-15
    发明作者:신동석；임인희；고민진；박용준；문명선
    申请人:성재갑；주식회사 엘지화학；
    IPC主号:
    专利说明:

    Epoxy resin composition for semiconductor device encapsulation and manufacturing method
    An object of the present invention is to provide an epoxy resin composition for sealing semiconductor devices excellent in Nd: YAG (Neodimium: Yttrium Aluminum Garnet) laser, and a method of manufacturing the same.
    In order to protect a semiconductor device from external environments such as moisture or mechanical impact, many methods of sealing using a plastic material such as an epoxy resin composition have been performed. Marking is performed on the surface of the molded resin encapsulation material in order to record information such as manufacturing company, product name, manufacturing number, and the like on the semiconductor element thus sealed. As one of the marking methods, there is a method of marking using a marking ink such as ultraviolet curable ink on the surface of a semiconductor element encapsulated with a resin composition, but in order to improve adhesion between the ink and the encapsulant and to give durability to the marking character, There is a hassle such as having to wash the surface with a cleaning agent such as an alkaline solution. In addition, even if the ink does not require a cleaning process, there is a problem that the semiconductor manufacturing process takes a long time and becomes complicated because it must go through a process of drying and curing the ink after marking.
    In order to solve this problem, a method of marking the encapsulant surface of a semiconductor device using a laser has been introduced. This method is rapidly increasing in use due to advantages such as fast processing speed, semi-permanent marking, and low cost.
    There are two types of lasers that are frequently used for marking semiconductor devices. CO 2 lasers and Nd: YAG lasers are preferred. Among them, Nd: YAG lasers are preferred because they have advantages in process automation and low operating costs. Marking using a laser, when the laser is irradiated to the surface of the resin composition, the temperature of the lighted portion is rapidly increased, and heat-sensitive components such as resin are decomposed and removed from the components of the heated portion, and thus the surface of the encapsulating material is different from the original encapsulant surface. It takes advantage of the phenomenon in which other new surfaces are revealed. In this case, the newly revealed surface due to the laser marking exhibits different characteristics from the original encapsulated surface around the unmarked surface in terms of scattering of light, so that the marking can be recognized. However, in the case of a semiconductor device encapsulated using a conventional resin composition, there is a problem that identification of marking characters is difficult because of insufficient contrast between marked and unmarked peripheral portions during laser marking. Has been done.
    In the case of using CO 2 laser, an effective coloring agent such as an azo metal complex dye was developed and a method of improving the marking property was proposed.However, for YAG laser, the degree of controlling the type and size of carbon (Japanese patent) Published 95-238210. Light with a wavelength of 10.6 μm generated by a CO 2 laser is well absorbed by silica and resin components, whereas light with a wavelength of 1.06 μm generated by a Nd: YAG laser is only absorbed by carbon black in the resin composition. It is known to penetrate with little absorption into the components. In the marking process using Nd: YAG laser, the light irradiated on the surface of the resin composition is absorbed by the carbon black to rapidly increase its temperature, and then the resin is decomposed and removed by heat as the temperature of the resin around the carbon black increases. In the YAG laser marking, when the amount of carbon black added to the resin composition is small, incomplete marking occurs due to insufficient thermal energy generated during marking, and on the contrary, when the amount of carbon black is too large, the electrical insulation of the resin composition There is a problem that the fall, and also the occurrence of soot during marking to increase the contamination of the marking area, making it difficult to identify the character.
    The present inventors have studied in various ways to obtain an epoxy resin composition having less soot and excellent character identification when marking using an Nd: YAG laser. When the phosphor having a light emitting band in the visible region is added to the resin composition, the marking portion It was found that the resin composition with excellent discrimination of marking characters was obtained due to the clear contrast between the and non-marking sites. In addition, when preparing a resin composition, carbon black is pre-dispersed in the resin to prepare a resin / carbon black mixture (master batch), and then mixed with other components to produce a resin composition, sooting is less generated and marking properties It has been found that an excellent resin composition can be obtained and the present invention has been completed.
    The resin composition of the present invention is composed of epoxy resins, curing agents, curing accelerators, inorganic fillers, and carbon black as main components. A low stress agent etc. can be added and used.
    Phosphor-based phosphors, silicate-based phosphors, tungstate-based phosphors, sulfide-based phosphors, rare earth-based phosphors, organometallic phosphors, and the like, as well as phosphors, which are characteristically used in the present invention, are light-emitting bands of visible light and ultraviolet or visible light. Any phosphor may be used as long as it has an excitation band in the light ray region, and two or more kinds of phosphors may be used simultaneously.
    At this time, the amount of the phosphor is appropriately 0.02 to 10 parts by weight based on 100 parts of the total resin composition. When using 0.02 parts by weight or less, the effect of improving the character identities due to phosphor addition is not obvious, and when used in excess of 10 parts by weight, the physical properties of the resin composition such as fluidity decrease.
    Another feature of the masterbatch in the present invention may be composed of epoxy resin and carbon black or epoxy resin, curing agent, and carbon black. To prepare the master batch, the epoxy resin and hardener are mixed with a certain amount of carbon black in a mixer such as a Henschel mixer. The amount of carbon black is preferably 0.07 to 0.5 parts by weight based on the total resin composition. When the amount of carbon black is 0.07 parts by weight or less, incomplete marking occurs. When the amount of carbon black is more than 0.5 parts by weight, soot is generated at the time of marking, and the identification of characters is reduced. As a method of mixing the resin and carbon black, the dry master batch method of mixing at room temperature while suppressing the temperature rise of the resin at the time of mixing to obtain a powdery mixture, and the temperature of the mixer above the melting point of the resin There is a melt master batch method of melt mixing in a heated state. Although both methods can be used, it is better to use the melt master batch method to obtain a more reliably dispersed resin / carbon black mixture.
    Hereinafter, the effects of the present invention will be described in detail with the following examples. However, the present invention is not limited only to these embodiments.
    Example 1
    Among the components of Example 1 shown in Table 1 below, epoxy resin, brominated epoxy resin, and carbon black were put together in a Henschel mixer, mixed for 10 minutes while heating to 130 ° C., and then cooled to cool the epoxy resin / carbon black mixture. Made. The epoxy resin / carbon black mixture and other components thus obtained were premixed (dried blended) at room temperature using a Henschel mixer, melt mixed using a biaxial roll, and then cooled and pulverized to obtain an epoxy resin composition. It was compressed into tablets in a constant shape for 150 seconds at 150 ° C. and then post-cured at 180 ° C. for 5 hours to produce a SOJ 24 pin package 17 × 7.6 × 2.7 mm. After YAG laser marking was performed under the following conditions, the sharpness of the marking and the amount of soot generation were determined using the naked eye and an optical microscope, and the results are shown in <Table 1>.
    YAG Laser Marker: Pulse Type, Hitachi
    Wavelength: 1.06 μm
    Pulse width: 120 μsec
    Laser Beam Output: 1.3 J / pulse
    Examples 2-4
    Except that the epoxy resin, brominated epoxy resin, hardening | curing agent, and carbon black were melt-mastered together among the composition components of Examples 2-4 of Table 1, it carried out similarly to Example 1.
    Comparative Examples 1 to 3
    The same procedure as in Example 1 was carried out except that the resin and carbon black were not masterbatched.
    <Table 1> Measurement results of marking clarity and soot generation according to the mixing ratio (unit: parts by weight)
    ingredientExample 1Example 2Example 3Example 4Comparative Example 1Comparative Example 2Comparative Example 3 Epoxy Resin Brominated Epoxy Resin Hardener Triphenylphosphine Molten Silica Silane Coupling Agent Antimony Trioxide Carnauba Wax Carbon Black Y203: EuLa203: Sm12.52.37.40.3750.51.50.50.163.5-12.52.37.40.3750.51.50.50.14-12.52.37.40.3750.51.50.50.13-2.512.52.37.40.3750.51.50.50.221.512.52.37.40.3750.51.50.50.07--12.52.37.40.3750.51.50.50.35--12.52.37.40.3750.51.50.50.19-- YAG Laser Marking * Clarity of Marking ○ ○ ○ ○ × △ △ Soot generation ○ ○ ○ ○ ○ × △
    * ○: Good, △: Somewhat defective, ×: Poor
    Epoxy Resin: ECON-1020-70
    Brominated epoxy resin: AER-745 (Asahishiba Co., Ltd.)
    Curing Agent: PSM-4324 (Gunyoung Chemical Products)
    Molten Silica: FB-74 (Denka) / ZA-30 (Tatsumori) = 70/30 Weight Ratio
    Silane coupling agent: gamma glycidoxypropyltrimethoxysilane
    As can be seen from the result of <Table 1>, the semiconductor element encapsulated with the epoxy resin composition provided by the present invention has less soot when Nd: YAG laser marking, easy identification of characters, and effective marking can be obtained. . Furthermore, when the semiconductor device is encapsulated using the epoxy resin composition, it is effective in shortening the manufacturing process and reducing the production cost of the semiconductor device.
    权利要求:
    Claims (10)
    [1" claim-type="Currently amended] In the epoxy resin composition containing an epoxy resin, a curing agent, a curing accelerator, an inorganic filler and carbon black,
    A resin composition for semiconductor element encapsulation, wherein the light emitting band is in the visible light region and the excitation band of the phosphor contains ultraviolet light or at least one fluorescent material in the visible light region.
    [2" claim-type="Currently amended] The resin composition for sealing semiconductor elements according to claim 1, which contains 0.02 to 10 parts by weight of the phosphor in 100 parts by weight of the total composition.
    [3" claim-type="Currently amended] The method of claim 1,
    A resin composition for encapsulating semiconductor elements, wherein the phosphor is selected from phosphate phosphors, silicate phosphors, tungstate phosphors, sulfide phosphors, rare earth phosphors, and organometallic phosphors.
    [4" claim-type="Currently amended] a) 100 parts by weight of a resin composition containing an epoxy resin, a curing agent, a curing accelerator, and an inorganic filler;
    b) 0.07 to 0.5 parts by weight of carbon black; and
    c) 0.02 to 10 parts by weight of the phosphor
    Resin composition for semiconductor element sealing comprising a.
    [5" claim-type="Currently amended] In manufacturing a resin composition for a semiconductor element sealing material,
    a) mixing the epoxy resin and carbon black to prepare a masterbatch; And
    b) mixing one or two or more phosphors in a master batch
    Resin composition manufacturing method for semiconductor element sealing containing a.
    [6" claim-type="Currently amended] The method of claim 5,
    The resin composition manufacturing method for semiconductor element sealing which mixes resin and carbon black by a dry master batch method.
    [7" claim-type="Currently amended] The method of claim 5,
    The resin composition manufacturing method for semiconductor element sealing which mixes resin and carbon black by a melt master batch method.
    [8" claim-type="Currently amended] The method of claim 7, wherein
    The resin composition manufacturing method for semiconductor element sealing which premixes before a melt master batch method.
    [9" claim-type="Currently amended] A method of irradiating and marking light generated by an Nd: YAG laser on a surface of a semiconductor element encapsulated with an epoxy resin composition comprising 100 parts by weight of an epoxy resin, 0.07 to 0.5 parts by weight of carbon black, and 0.02 to 10 parts by weight of phosphor.
    [10" claim-type="Currently amended] The method of claim 9,
    The wavelength of light generated by the laser is 1.06 μm.
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    同族专利:
    公开号 | 公开日
    KR100230624B1|1999-11-15|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1997-11-29|Application filed by 성재갑, 주식회사 엘지화학
    1997-11-29|Priority to KR1019970064624A
    1999-06-15|Publication of KR19990043601A
    1999-11-15|Application granted
    1999-11-15|Publication of KR100230624B1
    优先权:
    申请号 | 申请日 | 专利标题
    KR1019970064624A|KR100230624B1|1997-11-29|1997-11-29|Epoxy resin composition for semiconductor encapsulation and its preparation method|
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